, u na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . silico n pn p powe r transisto r telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 2sa107 9 descriptio n ? collector-emitte r breakdow n voltage - : v (b r)ceo=-160v(min. ) ? goo d linearit y o f h f e ? wid e are a o f saf e operatio n ? complemen t t o typ e 2sc252 9 application s ? hig h frequenc y powe r amplifier s ? audi o powe r amplifier s an d driver s absolut e maximu m ratings(ta=25c ) pi n 1 . bas e 2.collecto r s.ailtte r to-220 c packag e symbo l vcb o vce o veb o i c p c t j tstg paramete r collector-bas e voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s collecto r powe r dissipatio n @t c =25' c junctio n temperatur e storag e temperatur e rang e valu e -16 0 -16 0 -7 - 2 2 5 15 0 -65-15 0 uni t v v v a w ' c ' c u 1 a - b m ^cn j ,*; . k i i j h < t c a or . . p di m a b c d f g h j k l q r s u v ? ? ? m m mi n 15,5 0 9.9 0 4.2 0 0.7 0 3.4 0 4.9 8 2.6 3 0.4 4 13.0 0 1,2 0 2.7 0 2,3 0 1.2 9 6.4 5 8.6 6 ma x 15.9 0 10,2 0 4,5 0 0.9 0 3,7 0 5.1 8 2.9 0 0.6 0 13.4 0 1,4 5 2.9 0 2.7 0 1,3 5 6.6 5 8.8 6 * s -*- ? ^ - ?r * j n j seini-condiictor s reserve s th e righ t t o chang e test conditions , paramete r limit s an d packag e dimension s \vithou t police . informatio n furnishe d b y n. i semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . i umever . n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . " n j sem i -conductor s encourage s customer s t o verif y tha t datasheet s ar c curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n pn p powe r transisto r 2sa107 9 electrica l characteristic s t c =25 c unles s otherwis e specifie d symbo l v(br)ce o v(br)cb o v(br)eb o vce(sat ) vbe(on ) icb o ice o ieb o hpe- 1 hfe-2 co b f i paramete r collector-emitte r breakdow n voltag e collector-bas e breakdow n voltag e emitter-bas e breakdow n voltag e collector-emitte r saturatio n voltag e base-emitte r o n voltag e collecto r cutof f curren t collecto r cutof f curren t emitte r cutof f curren t d c curren t gai n d c curren t gai n outu t capacitanc e current-gai n bandwidt h produc t condition s lc = -1ma ; rbe = = i c =-1 m a ; i e = 0 i e =-1 m a;i 0 = 0 lc = -0.7a ; i b = -0.07 a lc = -0.7a ; v ce = -5 v v cb =-160v;i e = 0 v c e=-160v;i b = 0 v eb = -5v ; l c = 0 lc = -0.3a ; vce = -5 v lc = -0.7a ; v ce = -5 v l e =0;v c b=-10v;f = 1.0mh z lc = -0.5a ; v ce = -10v ; f=10mh z mi n -16 0 -16 0 - 5 6 0 5 0 typ . 10 0 14 0 ma x -1. 0 -1. 7 - 1 -10 0 - 1 35 0 uni t v vv v v m a v a m a p f mh z downloaded from: http:///
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